A Parametric Technique for Traps Characterization in AlGaN/GaN HEMTs
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A new parametric and cost-effective tech- nique is developed to decouple the mechanisms behind current degradation in AlGaN/GaN HEMTs under a nor- mal device operation: self-heating and charge trapping. A unique approach that investigates charge trapping using both source (IS) and drain (ID) transient currents for the first time. Two types of charge trapping mechanisms are identified: (i) bulk charge trapping occurring on a time scale of less than 1 ms, followed by (ii) surface charge trapping with a time constant larger than a millisecond. Through monitoring the difference between IS and ID, a bulk charge trapping time constant is found to be independent of both drain (VDS ) and gate (VGS ) biases. Surface charge trapping is found to have a much greater impact on a slow degrada- tion when compared to bulk trapping and self-heating. At a short timescale (< 1 ms), the RF performance is mainly restricted by both bulk charge trapping and self-heating effects. However, at a longer time (> 1 ms), the dynamic ON resistance degradation is predominantly limited by surface charge trapping.
IEEE Transactions on Electron Devices;
Duffy, S.J., Benbakhti, B., Zhang, W., Ahmeda, K., Kalna, K., Boucherta, M., Mattalah, M., Chahdi, H.O., Bourzgui, N.E. and Soltani, A. (2020) 'A Parametric Technique for Trap Characterization in AlGaN/GaN HEMTs', IEEE Transactions on Electron Devices, 67(5), pp.1924-1930.
Article published in IEEE Transactions on Electron Devices on 08 April 2020, available at: https://doi.org/10.1109/TED.2020.2980329.
Cardiff Metropolitan University (Grant ID: Cardiff Metropolian (Internal))
10.13039/501100004144-Liverpool John Moores University.
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