A Parametric Technique for Traps Characterization in AlGaN/GaN HEMTs

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Author
Duffy, S.J.
Benbakhti, B.
Zhang, W.
Ahmeda, Khaled
Kalna, K.
Boucherta, M.
Mattalah, M.
Chahdi, H.O.
Bourzgui, N.E.
Soltani, A.
Date
2020-04-08Acceptance date
2020
Type
Article
Publisher
IEEE
ISSN
0018-9383
Metadata
Show full item recordAbstract
A new parametric and cost-effective tech- nique is developed to decouple the mechanisms behind current degradation in AlGaN/GaN HEMTs under a nor- mal device operation: self-heating and charge trapping. A unique approach that investigates charge trapping using both source (IS) and drain (ID) transient currents for the first time. Two types of charge trapping mechanisms are identified: (i) bulk charge trapping occurring on a time scale of less than 1 ms, followed by (ii) surface charge trapping with a time constant larger than a millisecond. Through monitoring the difference between IS and ID, a bulk charge trapping time constant is found to be independent of both drain (VDS ) and gate (VGS ) biases. Surface charge trapping is found to have a much greater impact on a slow degrada- tion when compared to bulk trapping and self-heating. At a short timescale (< 1 ms), the RF performance is mainly restricted by both bulk charge trapping and self-heating effects. However, at a longer time (> 1 ms), the dynamic ON resistance degradation is predominantly limited by surface charge trapping.
Journal/conference proceeding
IEEE Transactions on Electron Devices;
Citation
Duffy, S.J., Benbakhti, B., Zhang, W., Ahmeda, K., Kalna, K., Boucherta, M., Mattalah, M., Chahdi, H.O., Bourzgui, N.E. and Soltani, A. (2020) 'A Parametric Technique for Trap Characterization in AlGaN/GaN HEMTs', IEEE Transactions on Electron Devices, 67(5), pp.1924-1930.
Description
Article published in IEEE Transactions on Electron Devices on 08 April 2020, available at: https://doi.org/10.1109/TED.2020.2980329.
Sponsorship
Cardiff Metropolitan University (Grant ID: Cardiff Metropolian (Internal))
10.13039/501100004144-Liverpool John Moores University.
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