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dc.contributor.authorDuffy, S.J.
dc.contributor.authorBenbakhti, B.
dc.contributor.authorZhang, W.
dc.contributor.authorAhmeda, Khaled
dc.contributor.authorKalna, K.
dc.contributor.authorBoucherta, M.
dc.contributor.authorMattalah, M.
dc.contributor.authorChahdi, H.O.
dc.contributor.authorBourzgui, N.E.
dc.contributor.authorSoltani, A.
dc.date.accessioned2020-07-09T09:12:40Z
dc.date.available2020-07-09T09:12:40Z
dc.date.issued2020-04-08
dc.identifier.citationDuffy, S.J., Benbakhti, B., Zhang, W., Ahmeda, K., Kalna, K., Boucherta, M., Mattalah, M., Chahdi, H.O., Bourzgui, N.E. and Soltani, A. (2020) 'A Parametric Technique for Trap Characterization in AlGaN/GaN HEMTs', IEEE Transactions on Electron Devices, 67(5), pp.1924-1930.en_US
dc.identifier.issn0018-9383
dc.identifier.urihttp://hdl.handle.net/10369/11098
dc.descriptionArticle published in IEEE Transactions on Electron Devices on 08 April 2020, available at: https://doi.org/10.1109/TED.2020.2980329.en_US
dc.description.abstractA new parametric and cost-effective tech- nique is developed to decouple the mechanisms behind current degradation in AlGaN/GaN HEMTs under a nor- mal device operation: self-heating and charge trapping. A unique approach that investigates charge trapping using both source (IS) and drain (ID) transient currents for the first time. Two types of charge trapping mechanisms are identified: (i) bulk charge trapping occurring on a time scale of less than 1 ms, followed by (ii) surface charge trapping with a time constant larger than a millisecond. Through monitoring the difference between IS and ID, a bulk charge trapping time constant is found to be independent of both drain (VDS ) and gate (VGS ) biases. Surface charge trapping is found to have a much greater impact on a slow degrada- tion when compared to bulk trapping and self-heating. At a short timescale (< 1 ms), the RF performance is mainly restricted by both bulk charge trapping and self-heating effects. However, at a longer time (> 1 ms), the dynamic ON resistance degradation is predominantly limited by surface charge trapping.en_US
dc.description.sponsorship10.13039/501100004144-Liverpool John Moores University.en_US
dc.language.isoenen_US
dc.publisherIEEEen_US
dc.relation.ispartofseriesIEEE Transactions on Electron Devices;
dc.titleA Parametric Technique for Traps Characterization in AlGaN/GaN HEMTsen_US
dc.typeArticleen_US
dc.identifier.doihttps://doi.org/10.1109/TED.2020.2980329
dcterms.dateAccepted2020
rioxxterms.funderCardiff Metropolitan Universityen_US
rioxxterms.identifier.projectCardiff Metropolian (Internal)en_US
rioxxterms.versionAMen_US
rioxxterms.licenseref.urihttp://www.rioxx.net/licenses/all-rights-reserveden_US
rioxxterms.licenseref.startdate2020-07-09
rioxxterms.funder.project37baf166-7129-4cd4-b6a1-507454d1372een_US


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